A new type of memory, called ReRAM (resistive RAM) promises us faster transfer speeds, lower energy usage (a thousandth of flash memory claimed) and small chips. ReRAM is based on materials whose electrical resistance changes when a voltage is applied. And the memory keeps this change even when the power is turned off.
A team of the University College of London has developed a structure made of silicon oxide that is a large improvement over the current available ones. Other companies such as Sharp and Panasonic are also researching the technology, but the UCL team found a way to make the memory work without the need of a vacuum, which make the chips more durable and cheaper to produce.
While the big tech giants are researching this memory and put a lot of effort in it, this ReRAM memory was found by accident. The researchers were actually trying to find a way to created LEDs from silicon oxide, but when one researchers looked at the way the material behaved it became clear it could be an ultimate ingredient for a new type of memory we're all waiting for.
