According to a news published at Technology Review, Samsung is working to a new flash-memory chip capable of doubling the data capacity of USB pendrives.
Basically, the idea is building chips with multiple layers of silicon, creating 3-D structures. As stated by Soon-Moon Jung, Samsung’s lead researcher, combining today’s chip-making processes with the new 3-D design, it could be possible to build a one-terabit flash chip composed of eight layers of silicon.
The construction process is still under developement, because there are some technical difficulties not yet solved. For example, in current prototype chips the wire interconnects used for communication between layers and beyond the chip are fabricated simultaneously; if the wires were added separately, the 3-D chips would be much more expensive to make, due to the extra steps involved in ensuring communication between layers.