Samsung has announced it started mass production of its fifth generation V-NAND. The chips are only available in a capacity of 256 gigabit (32 GB). Samsung claims that its latest generation V-NAND chips are up to 40% faster than the previous generation.
Where Samsung's fourth generation V-NAND had 64-layers, Samsung achieved to fit 96 layers on its fifth generation memory chips. Despite the 50% increase in layers, the new chips are smaller than its predecessors. The chips also consume less energy, the new chips work at 1.2 volt, while the older chips consume 1.8 volt.
The Korean electronics giant also boasts that its new V-NAND features the fastest data write speed to date at 500-microseconds (μs), which is a 30% improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.
Samsungs fifth generation V-NAND also introduces a new feature that the company calls 'Toggle DDR 4.0 interface'. This is responsible for the ability to reach 1.4 Gb/s transfer rates, which Samsung claims is a 40% increase over its 64-layer fourth generation NAND.
Besides announcing the new fifth generation 265 Gb V-NAND chips, Samsung also states in the press release that its preparing 1 terabit (Tb) and quad-level cell (QLC) V-NAND chips.
