Toshiba today unveiled a chip using its 3D NAND variant, BiCS Flash that should compete with Samsung’s V-NAND. The new chip is 32 GB 48-layer BiCS chips using 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.
BiCS FLASH is Toshiba’s take on 3D NAND and the company has achieved a chip with 48 layers. The 3D NAND surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds. The new 32GB chip is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centres.
Since announcing prototype BiCS FLASH technology in June 2007, Toshiba has continued development towards optimisation for mass production. To meet further growth in the Flash memory market in 2016 and beyond, Toshiba is proactively promoting migration to BiCS FLASH by rolling out a product portfolio that emphasises large capacity applications, such as SSD.
Toshiba is currently readying for mass production of BiCS FLASH in a new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.